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hexfet ? power mosfet these hexfet ? power mosfet?s in a dual so-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of these hexfet power mosfet?s are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. the 175c rating for the so-8 package provides improved thermal performance with increased safe operating area and dual mosfet die capability make it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel. ? advanced process technology ? dual n-channel mosfet ? ultra low on-resistance ? 175c operating temperature ? repetitive avalanche allowed up to tjmax ? lead-free ?
description so-8 v dss r ds(on) max i d 55v 0.050@v gs = 10v 5.1a 0.065@v gs = 4.5v 4.42a d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 absolute maximum ratings parameter max. units v ds drain-source voltage 55 v i d @ t a = 25c continuous drain current, v gs @ 10v 5.1 i d @ t a = 70c continuous drain current, v gs @ 10v 4.2 a i dm pulsed drain current 42 p d @t a = 25c maximum power dissipation 2.4 w p d @t a = 70c maximum power dissipation 1.7 w linear derating factor 1 6 mw/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 140 mj i ar avalanche current 5.1 a e ar repetitive avalanche energy see fig. 14, 15, 16 mj t j , t stg junction and storage temperature range -55 to + 175 c thermal resistance parameter max. un its r ja maximum junction-to-ambient 62.5 c/w

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"# form quantity tube/bulk 95 IRF7341GPBF tape and reel 4000 irf7341gtrpbf package type standard pack orderable part number IRF7341GPBF so-8 base part number

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parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 2.6a, v gs = 0v t rr reverse recovery time ??? 51 77 ns t j = 25c, i f = 2.6a q rr reverse recovery charge ??? 76 114 nc di/dt = 100a/ s source-drain ratings and characteristics 42 2.4 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v gs = 0v, i d = 250 a v (br)dss / t j breakdown voltage temp. coefficient ??? 0.052 ??? v/c reference to 25c, i d = 1ma ??? 0.043 0.050 v gs = 10v, i d = 5.1a 0.056 0.065 v gs = 4.5v, i d = 4.42a v gs(th) gate threshold voltage 1.0 ??? ??? v v ds = v gs , i d = 250 a g fs forward transconductance 10.4 ??? ??? s v ds = 10v, i d = 5.2a ??? ??? 2.0 v ds = 44v, v gs = 0v ??? ??? 25 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v q g total gate charge ??? 29 44 i d = 5.2a q gs gate-to-source charge ??? 2.9 4.4 nc v ds = 44v q gd gate-to-drain ("miller") charge ??? 7.3 11 v gs = 10v t d(on) turn-on delay time ??? 9.2 ??? v dd = 28v t r rise time ??? 7.7 ??? i d = 1.0a t d(off) turn-off delay time ??? 31 ??? r g = 6.0 t f fall time ??? 12.5 ??? v gs = 10v c iss input capacitance ??? 780 ??? v gs = 0v c oss output capacitance ??? 190 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 66 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. pulse width 300 s duty cycle
surface mounted on fr-4 board, 10sec s d g

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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 2.0 3.0 4.0 5.0 6.0 7.0 v = 25v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 5.2a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 20 s pulse width tj = 25c vgs top 15.0v 10.0v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 20 s pulse width tj = 175c 2.7v vgs top 15.0v 10.0v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 2.7v

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fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 5.2a v = 11v ds v = 27v ds v = 44v ds 0.1 1 10 100 0.2 0.5 0.8 1.1 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 175 c j t = 25 c j 0.1 1 10 100 1000 0.1 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 1200 1400 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd

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fig 10. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10b. switching time waveforms fig 10a. switching time test circuit
1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 175 0.0 1.0 2.0 3.0 4.0 5.0 6.0 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

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fig 12. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage fig 13b. gate charge test circuit d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13a. basic gate charge waveform q g q gs q gd v g charge
fig 14. maximum avalanche energy vs. drain current 25 50 75 100 125 150 175 0 80 160 240 320 400 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 2.1a 4.3a 5.1a 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 v gs, gate -to -source voltage (v) 0.020 0.030 0.040 0.050 0.060 0.070 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = 7.1a 0 102030405060 i d , drain current ( a ) 0.020 0.040 0.060 0.080 0.100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) vgs = 4.5v vgs = 10v

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fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 tav (sec) 0.001 0.01 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming tj = 25c due to avalanche losses 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 5.1a

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so-8 package outline (mosfet & fetky) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 b as ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 basic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 b as ic 0.635 b as ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4. ou t l i ne conf or ms t o je de c ou t l i ne ms - 0 12 aa. not e s : 1. dime ns ioning & t ole rancing pe r as me y14.5m-1994. 2. cont rolling dimens ion: millimet er 3. dime ns ions ar e s h own i n mi l l i me t e r s [ inch e s ]. 5 dime ns ion doe s not include mold prot rus ions . 6 dime ns ion doe s not include mold prot rus ions . mol d prot rus ions not t o excee d 0.25 [.010]. 7 dime ns ion is t he lengt h of lead f or s ol dering t o a s ubs t rat e. mol d prot rus ions not t o excee d 0.15 [.006]. dimensions are shown in milimeters (inches) so-8 part marking information

example: this is an irf8707gpbf rectifier logo int ernat ional f 8707g xxxx p = disgnates lead - free dat e code (yww) y = las t digit of t he year a = assembly site code ww = we e k product part number (g des ignat es lot code halogen-free

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330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/

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